features trenchfet power mosfets pwm optimized for high efficiency applications buck converter - high-side - low-side synchronous rectifier - secondary rectifier SUD50N03-10CP vishay siliconix document number: 71791 s-31270?rev. c, 16-jun-03 www.vishay.com 1 n-channel 30-v (d-s), 175 c, mosfet pwm optimized product summary v (br)dss (v) r ds(on) ( ) i d (a) a 30 0.010 @ v gs = 10 v 62 c 30 0.012 @ v gs = 4.5 v 55 c d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD50N03-10CP absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) a t c = 25 c i d 62 c continuous drain current (t j = 175 c) a t c = 100 c i d 44 c a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 20 maximum power dissipation t c = 25 c p d 71 b w maximum power dissipation t a = 25 c p d 8.3 a w operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 15 18 maximum junction-to-ambient a steady state r thja 40 50 c/w maximum junction-to-case (drain) steady state r thjc 1.75 2.1 notes: a surface mounted on 1? x 1? fr4 board, t 10 sec. b see soa curve for voltage derating. c based on maximum allowable junction temperature. package limitation current is 50 a.
SUD50N03-10CP vishay siliconix www.vishay.com 2 document number: 71791 s-31270?rev. c, 16-jun-03 mosfet specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 24 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 125 c 50 g dss v ds = 24 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d = 15 a 0.008 0.010 drain source on state resistance a r ds( ) v gs = 10 v, i d = 15 a, t j = 125 c 0.016 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a, t j = 175 c 0.020 v gs = 4.5 v, i d = 15 a 0.0105 0.012 forward transconductance a g fs v ds = 15 v, i d = 15 a 20 60 s dynamic b input capacitance c iss 1725 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 425 pf reversen transfer capacitance c rss 120 total gate charge c q g 13 18 gate-source charge c q gs v ds = 15 v, v gs = 4.5 v, i d = 62 a 4.5 nc gate-drain charge c q gd ds , gs , d 4.0 gate resistance r g 1.7 turn-on delay time c t d(on) 10 15 rise time c t r v dd = 15 v, r l = 1 160 240 ns turn-off delay time c t d(off) v dd = 15 v , r l = 1 i d 62 a, v gen = 10 v, r g = 6 30 45 ns fall time c t f d gen g 55 85 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 62 a pulsed current i sm 100 a forward voltage a v sd i f = 15 a, v gs = 0 v 0.85 12 v reverse recovery time t rr i f = 62 a, di/dt = 100 a/ s 80 110 ns notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUD50N03-10CP vishay siliconix document number: 71791 s-31270?rev. c, 16-jun-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 0 1020304050 0.000 0.003 0.006 0.009 0.012 0.015 0 1020304050 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - transconductance (s) g fs 25 c -55 c 3 v t c = 125 c v ds = 15 v i d = 15 a v gs = 10 thru 4 v v gs = 10 v c rss t c = - 55 c 25 c 125 c v gs = 4.5 v - on-resistance ( r ds(on) ) - drain current (a) i d i d - drain current (a) 0 500 1000 1500 2000 2500 0 6 12 18 24 30 c iss c oss
SUD50N03-10CP vishay siliconix www.vishay.com 4 document number: 71791 s-31270?rev. c, 16-jun-03 typical characteristics (25 c unless noted) 0.50 0.75 1.00 1.25 1.50 1.75 2.00 - 50 - 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 50 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 15 a t j = 25 c t j = 150 c (normalized) - on-resistance ( r ds(on) ) 0 thermal ratings 0 5 10 15 20 25 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 0.01 100 maximum avalanche drain current vs. ambient t emperature t a - case temperature ( c) - drain current (a) i d 1 ms 10 s 100 s - drain current (a) i d 1 0.1 limited by r ds(on) t a = 25 c single pulse 10 ms 100 ms dc 1 s 10 s 100 s 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 10 600 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja = 40 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 100
SUD50N03-10CP vishay siliconix document number: 71791 s-31270?rev. c, 16-jun-03 www.vishay.com 5 thermal ratings 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 110 duty cycle = 0.5 0.2 0.1 0.05 single pulse normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.02
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